IRFD9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) -60 DS Repetitive avalanche rated R ( )V = -10 V 0.28 DS(on) GS For automatic insertion Q max. (nC) 19 g End stackable Q (nC) 5.4 gs Q (nC) 11 P-channel gd Configuration Single 175 C operating temperature Fast switching Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 HVMDIP DESCRIPTION G Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and cost G effectiveness. D The 4 pin DIP package is a low cost machine-insertable D case style which can be stacked in multiple combinations on P-Channel MOSFET standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP Lead (Pb)-Free IRFD9020PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -1.6 A Continuous Drain Current V at -10 V I GS D T = 100 C -1.1 A A a Pulsed Drain Current I -13 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I -1.6 A AR a Repetitive Avalanche Energy E 0.13 mJ AR Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). = -25 V, starting T = 25 C, L = 15 mH, R = 25 , I = -3.2 A (see fig. 12). b. V DD J g AS c. I -11 A, dI/dt -140 A/ms, V V , T 175 C. SD DD DS J d. 1.6 mm from case. S16-1506-Rev. D, 01-Aug-16 Document Number: 90170 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFD9020 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A -60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - - 0.056 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -1 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 -- 100 nA GSS GS V = -60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = - 0.96 A - - 0.28 DS(on) GS D b Forward Transconductance g V = -25 V, I = - 0.96 A 1.3 - - S fs DS D Dynamic Input Capacitance C -570 - iss V = 0 V, GS Output Capacitance C -3V = -25 V, 60- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -65- rss Total Gate Charge Q -- 19 g I = - 11 A, V = -48 V, D DS Gate-Source Charge Q --V = -10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -68 - r V = - 30 V, I = -11 A, DD D ns b R = 18 , R = 2.5, see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -29- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.6 S showing the A G integral reverse a Pulsed Diode Forward Current I -- - 13 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = -1.6 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = - 11A, di/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.32 0.64 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-1506-Rev. D, 01-Aug-16 Document Number: 90170 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000