IRFD9120, SiHFD9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dv/dt rating HVMDIP Repetitive avalanche rated G For automatic Insertion End stackable P-channel S G 175 C operating temperature D D Fast switching P-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) -100 DS Third generation power MOSFETs from Vishay provide the R ( )V = -10 V 0.60 DS(on) GS designer with the best combination of fast switching, Q max. (nC) 18 g ruggedized device design, low on-resistance and Q (nC) 3.0 gs cost-effectiveness. Q (nC) 9.0 gd The 4 pin DIP package is a low cost machine-insertable Configuration Single case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD9120PbF Lead (Pb)-free SiHFD9120-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -1.0 A Continuous drain current V at -10 V I GS D T = 100 C -0.70 A A a Pulsed drain current I -8.0 DM Linear derating factor 0.0083 W/C b Single pulse avalanche energy E 140 mJ AS a Repetitive avalanche current I -1.0 A AR a Repetitive avalanche energy E 0.13 mJ AR Maximum power dissipation T = 25 C P 1.3 W A D c Peak diode recovery dv/dt dv/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering rRecommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 52 mH, R = 25 , I = -2.0 A (see fig. 12) DD J g AS c. I -6.8 A, di/dt 110 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S19-0252-Rev. E, 18-Mar-2019 Document Number: 91139 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFD9120, SiHFD9120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.10 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -0.6 A - - 0.60 DS(on) GS D b Forward transconductance g V = -50 V, I = -0.60 A 0.71 - - S fs DS D Dynamic Input capacitance C - 390 - iss V = 0 V GS Output capacitance C -V = -25 V 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -45- rss Total gate charge Q -- 18 g I = -6.8 A, V = -80 V D DS Gate-source charge Q --V = -10 V 3.0 nC gs GS b see fig. 6 and 13 Turn-on delay time Q --9.0 gd Rise time t -9.6 - d(on) Turn-off delay time t -29 - r V = -50 V, I = -6.8 A DD D ns b R = 18 , R = 7.1 , see fig. 10 Fall time t -2g D 1- d(off) Turn-on delay time t -25- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -1.0 S showing the A integral reverse G a p -n junction diode Pulsed diode forward current I S -- -8.0 SM b Body diode voltage V T = 25 C, I = -1.0 A, V = 0 V -- -6.3 V SD J S GS Body diode reverse recovery time t - 98 200 ns rr b T = 25 C, I = -6.8 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.66 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S19-0252-Rev. E, 18-Mar-2019 Document Number: 91139 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000