X-On Electronics has gained recognition as a prominent supplier of PMDT290UNE,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDT290UNE,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDT290UNE,115 Nexperia

PMDT290UNE,115 electronic component of Nexperia
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Part No.PMDT290UNE,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 20V 800 MA DUAL N-CH TRENCH MOSFET
Datasheet: PMDT290UNE,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
845: USD 0.1538 ea
Line Total: USD 129.96 
Availability - 30510
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 845  Multiples: 1
Pack Size: 1
Availability Price Quantity
30510
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 845
Multiples : 1
845 : USD 0.1538
1000 : USD 0.108
2000 : USD 0.107
4000 : USD 0.0841

11643
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 237
Multiples : 1
237 : USD 0.549
250 : USD 0.5406
500 : USD 0.5323
1000 : USD 0.5241
3000 : USD 0.5157
6000 : USD 0.5074

3487
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2361
50 : USD 0.1922
150 : USD 0.1735
500 : USD 0.15
2500 : USD 0.1398
4000 : USD 0.1334

23280
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 0.0885

30510
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 845
Multiples : 1
845 : USD 0.1538

11643
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 237
Multiples : 1
237 : USD 0.549

   
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RoHS - XON
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
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We are delighted to provide the PMDT290UNE,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDT290UNE,115 and other electronic components in the MOSFETs category and beyond.

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PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 800 mA D GS amb Static characteristics (per transistor) R drain-source on-state V =4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .PMDT290UNE Nexperia 20 V, 800 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT290UNE - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT290UNE AE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - 20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =4.5 V T =25C - 800 mA D GS amb 1 V =4.5 V T =100 C - 500 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 3.2 A DM amb p 2 P total power dissipation T =25C - 330 mW tot amb 1 - 390 mW T = 25 C - 1090 mW sp Per device 2 P total power dissipation T =25C - 500 mW tot amb T junction temperature -55 150 C j T ambient temperature -55 150 C amb PMDT290UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 13 September 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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