IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 600 Definition DS Surface Mount (IRFBC40S, SiHFBC40S) R ( )V = 10 V 1.2 DS(on) GS Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Q (Max.) (nC) 60 g Available in Tape and Reel (IRFBC40S, SiHFBC40S) Q (nC) 8.3 gs Dynamic dV/dt Rating Q (nC) 30 150 C Operating Temperature gd Fast Switching Configuration Single Fully Avalanche Rated D Compliant to RoHS Directive 2002/95/EC DESCRIPTION 2 Third generation Power MOSFETs from Vishay provide the 2 D PAK (TO-263) I PAK (TO-262) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. 2 The D PAK is a surface mount power package capable of G the accommodating die sizes up to HEX-4. It provides the D S D S highest power capability and the lowest possible G S on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of N-Channel MOSFET its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 SiHFBC40STRL-GE3 SiHFBC40L-GE3 a IRFBC40SPbF IRFBC40STRLPbF IRFBC40LPbF Lead (Pb)-free a SiHFBC40S-E3 SiHFBC40STL-E3 SiHFBC40L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT e Drain-Source Voltage V 600 DS V e Gate-Source Voltage V 20 GS T = 25 C 6.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.9 A C a,e Pulsed Drain Current I 25 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 570 mJ AS a Repetitive Avalanche Current I 6.2 A AR a Repetitive Avalanche Energy E 13 mJ AR T = 25 C 130 C Maximum Power Dissipation P W D T = 25 C 3.1 A c, e Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V starting T = 25 C, L = 27 mH, R = 25 , I = 6.2 A (see fig. 12). DD J g AS c. I 6.2 A, dI/dt 80 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFBC40, SiHFBC40 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91116 www.vishay.com S11-1053-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA a (PCB Mounted, steady-state) C/W Maximum Junction-to-Case R -1.0 thJC Note a. When mounted on 1 square PCB ( FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.7 A -- 1.2 DS(on) GS D b Forward Transconductance g V = 100 V, I = 3.7 A 4.7 - - S fs DS D Dynamic Input Capacitance C - 1300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- 60 g I = 6.2 A, V = 480 V, D DS Gate-Source Charge Q --V = 10 V 8.3 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --30 gd Turn-On Delay Time t -13 - d(on) V = 300 V, I = 6.2 A, DD D Rise Time t -18 - r R = 9.1 , R = 47 , ns g D b, c Turn-Off Delay Time t -55- d(off) see fig. 10 Fall Time t -20- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6.2 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 25 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 6.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 450 940 ns rr b T = 25 C, I = 6.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.8 7.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRFBC40, SiHFBC40 data and test conditions. www.vishay.com Document Number: 91116 2 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000