IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 900 DS Available Repetitve Avalanche Rated R ( )V = 10 V 8.0 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 38 COMPLIANT g Ease of Paralleling Q (nC) 4.7 gs Q (nC) 21 Simple Drive Requirements gd Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFBF20PbF Lead (Pb)-free SiHFBF20-E3 IRFBF20 SnPb SiHFBF20 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 900 DS V Gate-Source Voltage V 20 GS T = 25 C 1.7 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.1 A C a Pulsed Drain Current I 6.8 DM Linear Derating Factor 0.43 W/C b Single Pulse Avalanche Energy E 180 mJ AS a Repetitive Avalanche Current I 1.7 A AR a Repetitive Avalanche Energy E 5.4 mJ AR Maximum Power Dissipation T = 25 C P 54 W C D c Peak Diode Recovery dV/dt dV/dt 1.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 117 mH, R = 25 , I = 1.7 A (see fig. 12). DD J g AS c. I 1.7 A, dI/dt 70 A/s, V 600, T 150 C. SD DD J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91120 www.vishay.com S11-0516-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBF20, SiHFBF20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS -2.3 Maximum Junction-to-Case (Drain) R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 900 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 1.1 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 900 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 720 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.0 A -- 8.0 DS(on) GS D Forward Transconductance g V = 100 V, I = 1.0 A 0.60 - - S fs DS D Dynamic Input Capacitance C - 490 - iss V = 0 V, GS Output Capacitance C -5V = 25 V, 5- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 38 g I = 1.7 A, V = 360 V, D DS V = 10 V nC Gate-Source Charge Q --4.7 gs GS b see fig. 6 and 13 Gate-Drain Charge Q -- 21 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -21 - r V = 450 V, I = 1.7 A, DD D ns b R = 18 , R = 280, see fig. 10 g D Turn-Off Delay Time t -56- d(off) Fall Time t -32- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.7 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 6.8 SM S b Body Diode Voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 350 530 ns rr T = 25 C, I = 1.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.85 1.3 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91120 2 S11-0516-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000