X-On Electronics has gained recognition as a prominent supplier of IRFBG30PBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRFBG30PBF MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRFBG30PBF Vishay

Hot IRFBG30PBF electronic component of Vishay
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See Product Specifications
Part No.IRFBG30PBF
Manufacturer: Vishay
Category: MOSFET
Description: N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRFBG30PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0352 ea
Line Total: USD 1.04

Availability - 10257
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8288
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 33
Multiples : 1
33 : USD 0.975
50 : USD 0.975
200 : USD 0.975
750 : USD 0.975
2500 : USD 0.975

10257
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0352
10 : USD 0.8816
50 : USD 0.7371
100 : USD 0.6471
500 : USD 0.619
1000 : USD 0.6021

6986
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 2.093
10 : USD 1.702
100 : USD 1.472
250 : USD 1.4375
500 : USD 1.3455
1000 : USD 1.219
2000 : USD 1.1845

729
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 1.755
10 : USD 1.456
17 : USD 0.988
46 : USD 0.936

4995
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 50
Multiples : 50
50 : USD 1.6667
1300 : USD 1.523
2600 : USD 1.417
3900 : USD 1.3364

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the IRFBG30PBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBG30PBF and other electronic components in the MOSFET category and beyond.

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The IRFBG30PBF is a N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB MOSFET transistor produced by Vishay. It is designed for use in high power switching applications, and is characterized by a low on-resistance, high surge capability and fast switching speed. The device also has enhanced protection circuitry for protection against over-current, over-voltage, reverse-bias and over-temperature conditions. It is suitable for use in AC-DC, DC-DC and motor drive applications, as well as in low voltage and load switching applications. The part features a through-hole package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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