X-On Electronics has gained recognition as a prominent supplier of IRFBG30PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFBG30PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFBG30PBF Vishay

Hot IRFBG30PBF electronic component of Vishay
IRFBG30PBF Vishay
IRFBG30PBF MOSFETs
IRFBG30PBF  Semiconductors

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See Product Specifications
Part No. IRFBG30PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRFBG30PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5939 ea
Line Total: USD 1.59 
Availability - 6543
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6543
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 1.5939
10 : USD 1.2852
50 : USD 0.8359
100 : USD 0.7179
500 : USD 0.6486
1000 : USD 0.6112

7308
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 2.5875
10 : USD 2.04
25 : USD 1.518
100 : USD 1.397
250 : USD 1.375
500 : USD 1.221
1000 : USD 1.21
2000 : USD 1.177

751
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.178
10 : USD 1.61
18 : USD 0.994
49 : USD 0.938

3713
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 55
Multiples : 1
55 : USD 1.173

970
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 34
Multiples : 1
34 : USD 1.8954
50 : USD 1.8763
100 : USD 1.4942
500 : USD 1.369
1000 : USD 1.2658
2000 : USD 1.253

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
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Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFBG30PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBG30PBF and other electronic components in the MOSFETs category and beyond.

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The IRFBG30PBF is a N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB MOSFET transistor produced by Vishay. It is designed for use in high power switching applications, and is characterized by a low on-resistance, high surge capability and fast switching speed. The device also has enhanced protection circuitry for protection against over-current, over-voltage, reverse-bias and over-temperature conditions. It is suitable for use in AC-DC, DC-DC and motor drive applications, as well as in low voltage and load switching applications. The part features a through-hole package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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