IRFD120, SiHFD120
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
V (V) 100
DS
Available
Repetitive Avalanche Rated
R ( )V = 10 V 0.27
DS(on) GS
RoHS*
For Automatic Insertion
Q (Max.) (nC) 16
COMPLIANT
g
End Stackable
Q (nC) 4.4
gs
Q (nC) 7.7 175 C Operating Temperature
gd
Configuration Single
Fast Switching
D
Ease of Paralleling
Compliant to RoHS Directive 2002/95/EC
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
S
G
cost-effectiveness.
S
D
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
N-Channel MOSFET
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
IRFD120PbF
Lead (Pb)-free
SiHFD120-E3
IRFD120
SnPb
SiHFD120
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 100
DS
V
Gate-Source Voltage V 20
GS
T = 25 C 1.3
A
Continuous Drain Current V at 10 V I
GS D
T = 100 C 0.94 A
A
a
Pulsed Drain Current I 10
DM
Linear Derating Factor 0.0083 W/C
b
Single Pulse Avalanche Energy E 100 mJ
AS
a
Repetitive Avalanche Current I 1.3 A
AR
a
Repetitive Avalanche Energy E 0.13 mJ
AR
Maximum Power Dissipation T = 25 C P 1.3 W
A D
c
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 175
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = 25 V, starting T = 25 C, L = 22 mH, R = 25 , I = 2.6 A (see fig. 12).
DD J g AS
c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91128 www.vishay.com
S10-2462-Rev. C, 08-Nov-10 1IRFD120, SiHFD120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R - 120 C/W
thJA
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V
GS(th) DS GS D
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = 100 V, V = 0 V - - 25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 80 V, V = 0 V, T = 150 C - - 250
DS GS J
b
Drain-Source On-State Resistance R V = 10 V I = 0.78 A - - 0.27
DS(on) GS D
b
Forward Transconductance g V = 50 V, I = 0.78 A 0.80 - - S
fs DS D
Dynamic
Input Capacitance C - 360 -
iss
V = 0 V
GS
Output Capacitance C -V = 25 V 150- pF
oss DS
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -34-
rss
Total Gate Charge Q -- 16
g
I = 9.2 A, V = 80 V
D DS
Gate-Source Charge Q --V = 10 V 4.4 nC
gs GS
b
see fig. 6 and 13
Gate-Drain Charge Q --7.7
gd
Turn-On Delay Time t -6.8 -
d(on)
Rise Time t -27 -
r
V = 50 V, I = 9.2 A
DD D ns
b
Turn-Off Delay Time t -1R = 18 , R = 5.2 , see fig. 108-
d(off) g D
Fall Time t -17-
f
D
Between lead,
Internal Drain Inductance L -4.0 -
D
6 mm (0.25") from
nH
package and center of
G
die contact
Internal Source Inductance L -6.0 -
S
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 1.3
S
showing the
A
integral reverse
G
a p - n junction diode
Pulsed Diode Forward Current I -- 10
SM S
b
Body Diode Voltage V T = 25 C, I = 1.3 A, V = 0 V -- 2.5 V
SD J S GS
Body Diode Reverse Recovery Time t - 130 260 ns
rr
b
T = 25 C, I = 9.2 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q - 0.65 1.3 C
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91128
2 S10-2462-Rev. C, 08-Nov-10