IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 250 DS Repetitive Avalanche Rated R ( )V = 10 V 1.1 RoHS DS(on) GS For Automatic Insertion COMPLIANT Q (Max.) (nC) 14 g End Stackable Q (nC) 2.7 gs Fast Switching Q (nC) 7.8 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on D S standard 0.1 pin centers. The dual drain serveres as a N-Channel MOSFET thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD224PbF Lead (Pb)-free SiHFD224-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 0.63 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.40 A A a Pulsed Drain Current I 5.0 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 60 mJ AS a Avalanche Current I 0.63 A AR a Repetitive Avalanche Energy E 0.10 mJ AR Maximum Power Dissipation T = 25 C P 1.0 W A D c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 15 mH, R = 25 , I = 2.5 A (see fig. 12). DD J g AS c. I 4.4 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. Document Number: 91132 www.vishay.com S10-2462-Rev. C, 08-Nov-10 1IRFD224, SiHFD224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.36 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.38 A -- 1.1 DS(on) GS D Forward Transconductance g V = 50 V, I = 2.6 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 260 - iss V = 0 V, GS Output Capacitance C -7V = 25 V, 7- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 14 g I = 4.4 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 2.7 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.8 gd Turn-On Delay Time t -7.0 - d(on) Rise Time t -13 - r V = 125 V, I = 4.4 A, DD D ns b Turn-Off Delay Time t -2R = 18 , R = 28 , see fig. 100- d(off) g D Fall Time t -12- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 0.63 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 5.0 SM S b Body Diode Voltage V T = 25 C, I = 0.63 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 200 400 ns rr b T = 25 C, I = 4.4 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.93 1.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91132 2 S10-2462-Rev. C, 08-Nov-10