IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion V (V) - 50 Compact, End Stackable DS Fast Switching R ()V = - 10 V 0.50 DS(on) GS Low Drive Current Q (Max.) (nC) 11 g Easy Paralleled Q (nC) 3.8 gs Excellent Temperature Stability Q (nC) 4.1 gd P-Channel Versatility Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION The HVMDIP technology is the key to Vishays advanced line of power MOSFET transistors. The efficient geometry S and unique processing of the HVMDIP design achieves very low on-state resistance combined with high HVMDIP transconductance and extreme device ruggedness. The p-channel HVMDIPs are designed for application which G require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel HVMDIPs such as voltage control, very fast switching, ease S of paralleling, and excellent temperature stability. G P-channels HVMDIPs are intended for use in power stages D D where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive P-Channel MOSFET stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package HVMDIP IRFD9010PbF Lead (Pb)-free SiHFD9010-E3 IRFD9010 SnPb SiHFD9010 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 50 DS V Gate-Source Voltage V 20 GS T = 25 C - 1.1 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 0.68 A C a Pulsed Drain Current I - 8.8 DM Linear Derating Factor 0.01 W/C Inductive Current, Clamped L = 100 H see fig. 14 I - 8.8 LM A Inductive Current, Unclamped (Avalanche Current) see fig. 15 I - 1.5 L Maximum Power Dissipation T = 25 C P 1W C D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 52 mH, R = 25 , I = - 2.0 A (see fig. 12). DD J g AS c. I - 4.0 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91405 www.vishay.com S10-0998-Rev. A, 26-Apr-10 1 IRFD9010, SiHFD9010 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 50 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.091 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = - 50 V, V = 0 V - - - 250 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 125 C - - - 1000 DS GS J On-State Drain Current I V = 10 V V > I x R max. - 1.1 - - A D(on) GS DS D(on) DS(on) b Drain-Source On-State Resistance R V = - 10 V I = - 0.58 A - 0.35 0.50 DS(on) GS D Forward Transconductance g V = - 20 V, I = - 2.4 A 1.7 2.5 - S fs DS D Dynamic Input Capacitance C - 240 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -7.2 11 g I = - 4.7 A, V = 0.8 V D DS Gate-Source Charge Q -2V = - 10 V .53.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q -2.74.1 gd Turn-On Delay Time t -6.1 9.2 d(on) V = - 25 V, I = - 4.7 A DD D Rise Time t -47 71 r R = 24 , R = 5.6 , ns g D Turn-Off Delay Time t -1b 320 d(off) see fig. 10 Fall Time t -3959 f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.1 A S showing the G integral reverse a Pulsed Diode Forward Current I -- - 8.8 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = - 0.7 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t 33 75 160 ns rr b T = 25 C, I = - 4.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q 0.090 0.22 0.52 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91405 2 S10-0998-Rev. A, 26-Apr-10