IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ( )V = 10 V 0.27 DS(on) GS RoHS* For Automatic Insertion Q (Max.) (nC) 16 COMPLIANT g End Stackable Q (nC) 4.4 gs Q (nC) 7.7 175 C Operating Temperature gd Configuration Single Fast Switching D Ease of Paralleling Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G cost-effectiveness. S D The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD123PbF Lead (Pb)-free SiHFD123-E3 IRFD123 SnPb SiHFD123 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 1.3 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.94 A A a Pulsed Drain Current I 10 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 100 mJ AS a Repetitive Avalanche Current I 1.3 A AR a Repetitive Avalanche Energy E 0.13 mJ AR Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 22 mH, R = 25 , I = 2.6 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90161 www.vishay.com S10-2466-Rev. C, 25-Oct-10 1IRFD123, SiHFD123 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.78 A - - 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 0.78 A 0.80 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V GS Output Capacitance C -V = 25 V 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -34- rss Total Gate Charge Q -- 16 g I = 9.2 A, V = 80 V D DS Gate-Source Charge Q --V = 10 V 4.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.7 gd Turn-On Delay Time t -6.8 - d(on) Rise Time t -27 - r V = 50 V, I = 9.2 A DD D ns b Turn-Off Delay Time t -1R = 18 , R = 5.2 , see fig. 108- d(off) g D Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.3 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 10 SM S b Body Diode Voltage V T = 25 C, I = 1.3 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 260 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.65 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90161 2 S10-2466-Rev. C, 25-Oct-10