IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 500 DS Repetitive Avalanche Rated Available R ( )V = 10 V 3.0 DS(on) GS For Automatic Insertion RoHS* Q (Max.) (nC) 24 COMPLIANT g End Stackable Q (nC) 3.3 gs Fast Switching Q (nC) 13 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable D case style which can be stacked in multiple combinations on S standard 0.1 inch pin centers. The dual drain serves as a N-Channel MOSFET thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD420PbF Lead (Pb)-free SiHFD420-E3 IRFD420 SnPb SiHFD420 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 0.37 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.23 A A a Pulsed Drain Current I 3.0 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 51 mJ AS a Repetitive Avalanche Current I 0.37 A AR a Repetitive Avalanche Energy E 0.10 mJ AR Maximum Power Dissipation T = 25 C P 1.0 W A D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 40 mH, R = 25 , I = 1.5 A. DD J g AS c. I 4.4 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91135 www.vishay.com S10-2463-Rev. C, 08-Nov-10 1IRFD420, SiHFD420 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.22 A -- 3.0 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.3 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 24 g b Gate-Source Charge Q --V = 10 V I = 2.1 A, V = 400 V3.3 nC gs GS D DS Gate-Drain Charge Q --13 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b Turn-Off Delay Time t -3R = 18 , R = 120 3- d(off) g D Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 0.37 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 5.0 SM S b Body Diode Voltage V T = 25 C, I = 0.37 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 260 520 ns rr b T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.70 1.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91135 2 S10-2463-Rev. C, 08-Nov-10