IRFD9120, SiHFD9120
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
V (V) - 100
DS
Available
Repetitive Avalanche Rated
R ( )V = - 10 V 0.60
DS(on) GS
RoHS*
For Automatic Insertion
Q (Max.) (nC) 18
COMPLIANT
g
End Stackable
Q (nC) 3.0
gs
Q (nC) 9.0 P-Channel
gd
Configuration Single
175 C Operating Temperature
S Fast Switching
Compliant to RoHS Directive 2002/95/EC
HVMDIP
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
S
G
cost-effectiveness.
D
D The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
P-Channel MOSFET
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
IRFD9120PbF
Lead (Pb)-free
SiHFD9120-E3
IRFD9120
SnPb
SiHFD9120
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V - 100
DS
V
Gate-Source Voltage V 20
GS
T = 25 C - 1.0
A
Continuous Drain Current V at - 10 V I
GS D
T = 100 C - 0.70 A
A
a
Pulsed Drain Current I - 8.0
DM
Linear Derating Factor 0.0083 W/C
b
Single Pulse Avalanche Energy E 140 mJ
AS
a
Repetitive Avalanche Current I - 1.0 A
AR
a
Repetitive Avalanche Energy E 0.13 mJ
AR
Maximum Power Dissipation T = 25 C P 1.3 W
A D
c
Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 175
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = - 25 V, starting T = 25 C, L = 52 mH, R = 25 , I = - 2.0 A (see fig. 12).
DD J g AS
c. I - 6.8 A, dI/dt 110 A/s, V V , T 175 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91139 www.vishay.com
S10-2464-Rev. D, 25-Oct-10 1IRFD9120, SiHFD9120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R - 120 C/W
thJA
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 100 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.10 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V
GS(th) DS GS D
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = - 100 V, V = 0 V - - - 100
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = - 80 V, V = 0 V, T = 150 C - - - 500
DS GS J
b
Drain-Source On-State Resistance R V = - 10 V I = - 0.6 A - - 0.60
DS(on) GS D
b
Forward Transconductance g V = - 50 V, I = - 0.60 A 0.71 - - S
fs DS D
Dynamic
Input Capacitance C - 390 -
iss
V = 0 V
GS
Output Capacitance C -V = - 25 V 170- pF
oss DS
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -45-
rss
Total Gate Charge Q -- 18
g
I = - 6.8 A, V = - 80 V
D DS
Gate-Source Charge Q --V = - 10 V 3.0 nC
gs GS
b
see fig. 6 and 13
Gate-Drain Charge Q --9.0
gd
Turn-On Delay Time t -9.6 -
d(on)
Rise Time t -29 -
r
V = - 50 V, I = - 6.8 A
DD D ns
b
Turn-Off Delay Time t -2R = 18 , R = 7.1 , see fig. 101-
d(off) g D
Fall Time t -25-
f
D
Between lead,
Internal Drain Inductance L -4.0 -
D
6 mm (0.25") from
nH
package and center of
G
die contact
Internal Source Inductance L -6.0 -
S
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- - 1.0
S
showing the
A
integral reverse
G
a p - n junction diode
Pulsed Diode Forward Current I -- - 8.0
SM S
b
Body Diode Voltage V T = 25 C, I = - 1.0 A, V = 0 V -- - 6.3 V
SD J S GS
Body Diode Reverse Recovery Time t - 98 200 ns
rr
b
T = 25 C, I = - 6.8 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q - 0.33 0.66 C
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91139
2 S10-2464-Rev. D, 25-Oct-10