IPS110N12N3GBKMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 120V OptiMOS 3 Power-Transistor IPD S110N12N3 G Data Sheet Rev. 2.4 Final Industrial & Multimarket IPD110N12N3 G IPS110N12N3 G TM OptiMOS 3Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 11 DS(on),max m Excellent gate charge x R product (FOM) DS(on) I 75 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen free according to IEC61249-2-21 * Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 75 A D C T =100 C 54 C 2) I T =25 C 300 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =75 A, R =25 120 mJ AS D GS 3) V 20 V Gate source voltage GS P T =25 C 136 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) see figure 3 3) T =150C and duty cycle D=0.01 for V <-5V jmax gs * Except package TO251-3 Rev. 2.4 page 1 2015-06-24