X-On Electronics has gained recognition as a prominent supplier of IRFBE30PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFBE30PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFBE30PBF Vishay

Hot IRFBE30PBF electronic component of Vishay
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See Product Specifications
Part No.IRFBE30PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRFBE30PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2385 ea
Line Total: USD 1.24 
Availability - 928
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1639
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 37
Multiples : 1
37 : USD 0.8775
50 : USD 0.8775
200 : USD 0.8775
750 : USD 0.8775
2500 : USD 0.8775

928
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2385
10 : USD 1.0538
50 : USD 0.848
100 : USD 0.7346
500 : USD 0.6829
1000 : USD 0.6597

1080
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.178
10 : USD 1.353
100 : USD 1.298
500 : USD 1.254

105
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.506
10 : USD 1.568
16 : USD 1.092
44 : USD 1.022

873
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 9
Multiples : 1
9 : USD 1.4498

970
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 50
Multiples : 50
50 : USD 2.0766

2667
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 50
Multiples : 50
50 : USD 2.0766

1039
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 7
Multiples : 1
7 : USD 1.074

900
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 7
Multiples : 1
7 : USD 1.1439

92
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 33
Multiples : 1
33 : USD 1.2318
50 : USD 1.2285

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFBE30PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBE30PBF and other electronic components in the MOSFETs category and beyond.

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The Vishay IRFBE30PBF is an N-Channel MOSFET transistor designed for use in high-speed switching applications. It is manufactured using advanced PowerMOS technology, which offers enhanced performance and reliability over other types of MOSFETs. It features low on-resistance values, a low input capacitance and a wide drain-source breakdown voltage. This MOSFET is capable of switching frequencies up to 100 kHz and is available in both a through-hole and a surface-mount package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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