X-On Electronics has gained recognition as a prominent supplier of IRFD010PBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRFD010PBF MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRFD010PBF Vishay

IRFD010PBF electronic component of Vishay
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See Product Specifications
Part No.IRFD010PBF
Manufacturer: Vishay
Category: MOSFET
Description: N-Channel 50 V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP
Datasheet: IRFD010PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.6463 ea
Line Total: USD 64.63

Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 1.7773
10 : USD 1.5909
25 : USD 1.5101
100 : USD 1.2405
250 : USD 1.1595
500 : USD 1.0247
1000 : USD 0.809
2500 : USD 0.755
5000 : USD 0.7173

0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 100
Multiples : 100
100 : USD 0.5612

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFD010PBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFD010PBF and other electronic components in the MOSFET category and beyond.

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IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available For Automatic Insertion R ( )V = 10 V 0.20 DS(on) GS RoHS* End Stackable Q (Max.) (nC) 11 g COMPLIANT 175 C Operating Temperature Q (nC) 3.1 gs Q (nC) 5.8 Fast Switching gd Configuration Single Ease of Paralleling Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and S G cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable D S case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal N-Channel MOSFET link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD014PbF Lead (Pb)-free SiHFD014-E3 IRFD014 SnPb SiHFD014 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 1.7 A Continuous Drain Current V at 10 V I GS D T = 100 C 1.2 A A a Pulsed Drain Current I 14 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 130 mJ AS Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 52 mH, R = 25 , I = 1.7 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91125 www.vishay.com S10-2466-Rev. C, 25-Oct-10 1IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.063 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.0 A - - 0.20 DS(on) GS D b Forward Transconductance g V = 25 V, I = 1.0 A 0.96 - - S fs DS D Dynamic Input Capacitance C - 310 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 11 g I = 10 A, V = 48 V D DS Gate-Source Charge Q --V = 10 V 3.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.8 gd Turn-On Delay Time t -10 - d(on) Rise Time t -50 - r V = 30 V, I = 10 A DD D ns b Turn-Off Delay Time t -1R = 24 , R = 2.7 , see fig. 103- d(off) g D Fall Time t -19- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.7 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 14 SM S b Body Diode Voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 70 140 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.20 0.40 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91125 2 S10-2466-Rev. C, 25-Oct-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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