IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available For Automatic Insertion R ( )V = 10 V 0.20 DS(on) GS RoHS* End Stackable Q (Max.) (nC) 11 g COMPLIANT 175 C Operating Temperature Q (nC) 3.1 gs Q (nC) 5.8 Fast Switching gd Configuration Single Ease of Paralleling Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and S G cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable D S case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal N-Channel MOSFET link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD014PbF Lead (Pb)-free SiHFD014-E3 IRFD014 SnPb SiHFD014 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 1.7 A Continuous Drain Current V at 10 V I GS D T = 100 C 1.2 A A a Pulsed Drain Current I 14 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 130 mJ AS Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 52 mH, R = 25 , I = 1.7 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91125 www.vishay.com S10-2466-Rev. C, 25-Oct-10 1IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.063 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.0 A - - 0.20 DS(on) GS D b Forward Transconductance g V = 25 V, I = 1.0 A 0.96 - - S fs DS D Dynamic Input Capacitance C - 310 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 11 g I = 10 A, V = 48 V D DS Gate-Source Charge Q --V = 10 V 3.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.8 gd Turn-On Delay Time t -10 - d(on) Rise Time t -50 - r V = 30 V, I = 10 A DD D ns b Turn-Off Delay Time t -1R = 24 , R = 2.7 , see fig. 103- d(off) g D Fall Time t -19- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.7 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 14 SM S b Body Diode Voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 70 140 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.20 0.40 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91125 2 S10-2466-Rev. C, 25-Oct-10