PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 200V 0.023 98A Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Super-220 Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 98 D C GS I T = 100C Continuous Drain Current, V 10V 71 A D C GS I Pulsed Drain Current 390 DM P T = 25C Power Dissipation 650 W D C Linear Derating Factor 4.3 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 6.3 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Recommended Clip Force 20 N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.23 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 58 JA Notes through are on page 8 www.irf.com 1 IRFBA90N20DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.22 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.023 V = 10V, I = 59A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 41 S V = 50V, I = 59A fs DS D Q Total Gate Charge 160 240 I = 59A g D Q Gate-to-Source Charge 45 67 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 75 110 V = 10V gd GS t Turn-On Delay Time 23 V = 100V d(on) DD t Rise Time 160 I = 59A r D ns t Turn-Off Delay Time 39 R = 1.2 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 6080 V = 0V iss GS C Output Capacitance 1040 V = 25V oss DS C Reverse Transfer Capacitance 150 pF = 1.0MHz rss C Output Capacitance 7500 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 410 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 790 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 960 mJ AS I Avalanche Current 59 A AR E Repetitive Avalanche Energy 65 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 98 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 390 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.5 V T = 25C, I = 59A, V = 0V SD J S GS t Reverse Recovery Time 220 340 nS T = 25C, I = 59A rr J F Q Reverse RecoveryCharge 1.9 2.8 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com