X-On Electronics has gained recognition as a prominent supplier of PMDXB600UNEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB600UNEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB600UNEZ Nexperia

PMDXB600UNEZ electronic component of Nexperia
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See Product Specifications
Part No.PMDXB600UNEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET
Datasheet: PMDXB600UNEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2882 ea
Line Total: USD 0.29 
Availability - 18463
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6745
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1742
Multiples : 1
1742 : USD 0.0746
3000 : USD 0.0661
6000 : USD 0.0577

4802
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1237
50 : USD 0.0948
150 : USD 0.0802
500 : USD 0.0692
2500 : USD 0.0607
5000 : USD 0.0563

18463
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2882
10 : USD 0.1815
100 : USD 0.0869
1000 : USD 0.0715
5000 : USD 0.0561
10000 : USD 0.0506
50000 : USD 0.0473
100000 : USD 0.0462

4850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.0495

6745
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1742
Multiples : 1
1742 : USD 0.0746

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMDXB600UNEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB600UNEZ and other electronic components in the MOSFETs category and beyond.

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The PMDXB600UNEZ MOSFET is a 20 V, dual N-channel Trench MOSFET manufactured by Nexperia using NXP Semiconductors technology. This device is specifically designed for use in switch-mode power supplies as well as automotive applications. This MOSFET features a high trigger and holding current, making it a suitable choice for designs with frequency or voltage switching. The device also comes with a very low on-state resistance, making it well-suited for applications where low power dissipation is desired. This device offers a wide range of operation temperatures and superior reliability, ensuring it can function in harsh environments. The PMDXB600UNEZ is an ideal choice for any design requiring superior power efficiency, high speed switching, and reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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