X-On Electronics has gained recognition as a prominent supplier of PMN48XP,125 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMN48XP,125 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMN48XP,125 Nexperia

PMN48XP,125 electronic component of Nexperia
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Part No.PMN48XP,125
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 20V 4.1A P-channel Trench MOSFET
Datasheet: PMN48XP,125 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5016 ea
Line Total: USD 0.5 
Availability - 3621
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3621
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3674
100 : USD 0.253
500 : USD 0.2046
1000 : USD 0.1826
3000 : USD 0.1606
6000 : USD 0.1452
9000 : USD 0.1408
24000 : USD 0.1386

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMN48XP,125 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN48XP,125 and other electronic components in the MOSFETs category and beyond.

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PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 21 April 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low R Trench MOSFET technology DSon Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C ---4.1 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-2.4A T = 25 C - 48 55 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 6 5 4 2 D drain 3 G gate G 4S source 132 S 5 D drain SOT457 (TSOP6) 017aaa094 6 D drainPMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN48XP TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN48XP ZV 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - -20 V DS j V gate-source voltage -12 12 V GS 1 I drain current V =-4.5 V T =25C --4.1 A D GS amb 1 V =-4.5 V T =100 C --2.5 A GS amb I peak drain current T = 25 C single pulse t 10 s - -20 A DM amb p 2 P total power dissipation T =25C - 530 mW tot amb 1 - 1285 mW T = 25 C - 6250 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C --1.4 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN48XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 21 April 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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