PMPB95ENEAX Nexperia

PMPB95ENEA 80 V, single N-channel Trench MOSFET 17 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 80 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 4.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 2.8 A T = 25 C - 80 105 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB95ENEA 80 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 3 G gate G 3 4 8 4 S source Transparent top view 5 D drain DFN2020MD-6 (SOT1220) S 6 D drain 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB95ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB95ENEA 2A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 80 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - 4.1 A D GS amb V = 10 V T = 25 C 1 - 2.8 A GS amb V = 10 V T = 100 C 1 - 1.8 A GS amb I peak drain current T = 25 C single pulse t 10 s - 11.2 A DM amb p PMPB95ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 17 December 2013 2 / 15