PMV48XPAR Nexperia

PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. Applications High-side loadswitch High-speed line driver Relay driver Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS amb V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C 1 - - -3.5 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.4 A T = 25 C - 48 55 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV48XPA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source G 3 D drain 1 2 S TO-236AB (SOT23) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV48XPA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV48XPA %DZ 1 % = placeholder for manufacturing site code PMV48XPA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 March 2014 2 / 15