X-On Electronics has gained recognition as a prominent supplier of PMV55ENEAR MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV55ENEAR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV55ENEAR Nexperia

PMV55ENEAR electronic component of Nexperia
PMV55ENEAR Nexperia
PMV55ENEAR MOSFETs
PMV55ENEAR  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMV55ENEAR
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
Datasheet: PMV55ENEAR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3913 ea
Line Total: USD 0.39 
Availability - 381253
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58200
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1235
99000 : USD 0.1166

5044
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 898
Multiples : 1
898 : USD 0.1447
1000 : USD 0.1396
3000 : USD 0.1294

3564
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.3783
50 : USD 0.2996
150 : USD 0.2052
500 : USD 0.1725
3000 : USD 0.1582
6000 : USD 0.1495

381253
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.245
100 : USD 0.1524
1000 : USD 0.1309
3000 : USD 0.11
99000 : USD 0.1089

331740
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3501
Multiples : 1
3501 : USD 0.1339

11640
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1294

58200
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1235
99000 : USD 0.1166

5044
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 898
Multiples : 1
898 : USD 0.1686

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMV55ENEAR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV55ENEAR and other electronic components in the MOSFETs category and beyond.

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PMV55ENEA 60 V, N-channel Trench MOSFET 21 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 3.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3.1 A T = 25 C - 46 60 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm .Nexperia PMV55ENEA 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV55ENEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV55ENEA DL% 1 % = placeholder for manufacturing site code PMV55ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 21 March 2016 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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