PMV65XP,215 Nexperia

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applications Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C - - -4.3 A D GS sp Static characteristics R drain-source on-state V = -4.5 V I = -2.8 A T = 25 C - 58 74 m DSon GS D j resistanceNexperia PMV65XP 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source G 3 D drain 1 2 S TO-236AB (SOT23) 017aaa257 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65XP TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65XP %M9 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C - -4.3 A D GS sp V = -4.5 V T = 25 C 1 - -2.8 A GS amb V = -4.5 V T = 100 C 1 - -1.8 A GS amb I peak drain current T = 25 C single pulse t 10 s - -16 A DM amb p P total power dissipation T = 25 C 2 - 480 mW tot amb 1 - 833 mW T = 25 C - 4165 mW sp PMV65XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 February 2013 2 / 14