PD - 95219A IRL2203NSPbF IRL2203NLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D V = 30V 175C Operating Temperature DSS Fast Switching Fully Avalanche Rated R = 7.0m DS(on) G 100% R Tested G Lead-Free I = 116A D S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest 2 possible on-resistance in any existing surface mount package. The D Pak 2 D Pak TO-262 is suitable for high current applications because of its low internal connection IRL2203NSPbF resistance and can dissipate up to 2.0W in a typical surface mount application. IRL2203NLPbF The through-hole version (IRL2203NL) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter Max Units I T = 25C Continuous Drain Current, V 10V 116 GS D C Continuous Drain Current, V 10V I T = 100C GS 82 A C D Pulsed Drain Current I 400 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 180 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 16 V GS Avalanche Current I AR 60 A Repetitive Avalanche Energy E AR 18 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns Operating Junction and T -55 to + 175 J C Storage Temperature Range T STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Symbol Parameter Typ Max Units Junction-to-Case R 0.85 JC C/W Junction-to-Ambient (PCB mount, steady state) R JA 40 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min Typ Max Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA D R 7.0 V = 10V, I = 60A Static Drain-to-Source On-Resistance GS D DS(on) 10 V = 4.5V, I = 48A GS D V GS(th) Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A DS GS D g fs Forward Transconductance 73 S V = 25V, I = 60A DS D I DSS Drain-to-Source Leakage Current 25 V = 30V, V = 0V DS GS A 250 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 16V GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS Q g Total Gate Charge 60 I = 60A D Q gs Gate-to-Source Charge 14 nC V = 24V DS Q gd Gate-to-Drain Mille) Charge 33 V = 4.5V, See Fig. 6 and 13 GS R G Gate Resistance 0.2 3.0 t d(on) Turn-On Delay Time 11 V = 15V DD t r Rise Time 160 I = 60A D t d(off) Turn-Off Delay Time 23 R = 1.8 G t Fall Time 66 V = 4.5V, See Fig. 10 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) Nh from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3290 V = 0V iss GS C Output Capacitance 1270 V = 25V oss pF DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Single Pulse Avalanche Energy 1320 290 E mJ I = 60A, L = 0.16mH AS AS Source-Drain Ratings and Characteristics Symbol Parameter Min Typ Max Units Conditions I Continuous Source Current MOSFET symbol S 116 (Body Diode) A showing the I Pulsed Source Current integral reverse SM 400 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 60A, V = 0V SD J S GS t Reverse Recovery Time 56 84 ns T = 25C, I = 60A rr J F di/dt = 100A/s Q Reverse Recovery Charge 110 170 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on This is a typical value at device destruction and represents operation outside rated limits. Repetitive rating pulse width limited by max. junction temperature. ( See fig. 11 ) This is a calculated value limited to T = 175C . J Starting T = 25C, L = 0.16mH R = 25 , Calculated continuous current based on maximum allowable J G I = 60A, V =10V (See Figure 12) AS GS junction temperature. Package limitation current is 75A. I 60A di/d 110A/s, V V , SD DD (BR)DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For T 175C J recommended footprint and soldering techniques refer to Pulse width 400s duty cycle 2%. application note AN-994. 2 www.irf.com