PD- 94062D IRF3711 SMPS MOSFET IRF3711S IRF3711L Applications HEXFET Power MOSFET High Frequency Isolated DC-DC V R max I DSS DS(on) D Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance 2 TO-220AB D Pak TO-262 Very Low RDS(on) at 4.5V V GS IRF3711 IRF3711S IRF3711L Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 110 D C GS I T = 100C Continuous Drain Current, V 10V 69 A D C GS I Pulsed Drain Current 440 DM P T = 25C Maximum Power Dissipation 120 W D C P T = 25C Maximum Power Dissipation 3.1 W D A Linear Derating Factor 0.96 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.04 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA Notes through are on page 11 www.irf.com 1 IRF3711/3711S/3711L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA (BR)DSS J D 4.7 6.0 V = 10V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 6.2 8.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 53 S V = 16V, I = 30A fs DS D Q Total Gate Charge 29 44 I = 15A g D Q Gate-to-Source Charge 7.3 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 8.9 V = 4.5V gd GS Q Output Gate Charge 33 V = 0V, V = 10V oss GS DS Rg Gate Resistance 0.3 2.5 t Turn-On Delay Time 12 V = 10V d(on) DD ns t Rise Time 220 I = 30A r D t Turn-Off Delay Time 17 R = 1.8 d(off) G t Fall Time 12 V = 4.5V f GS C Input Capacitance 2980 V = 0V iss GS C Output Capacitance 1770 pF V = 10V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 460 mJ AS I Avalanche Current 30 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 110 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 440 (Body Diode) p-n junction diode. S 0.88 1.3 V T = 25C, I = 30A, V = 0V J S GS V Diode Forward Voltage SD 0.82 T = 125C, I = 30A, V = 0V J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = 16A, V =10V rr J F R Q Reverse Recovery Charge 61 92 nC di/dt = 100A/s rr t Reverse Recovery Time 48 72 ns T = 125C, I = 16A, V =10V rr J F R Q Reverse Recovery Charge 65 98 nC di/dt = 100A/s rr 2 www.irf.com