PMV65XPEA Nexperia

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: P = 890 mW tot ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.3 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.8 A T = 25 C - 67 78 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors PMV65XPEA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65XPEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65XPEA DN% 1 % = placeholder for manufacturing site code PMV65XPEA All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 27 November 2014 2 / 16