X-On Electronics has gained recognition as a prominent supplier of PMXB120EPEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMXB120EPEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMXB120EPEZ Nexperia

PMXB120EPEZ electronic component of Nexperia
PMXB120EPEZ Nexperia
PMXB120EPEZ MOSFETs
PMXB120EPEZ  Semiconductors

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See Product Specifications
Part No. PMXB120EPEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors 30 V, P-channel Trench MOSFET
Datasheet: PMXB120EPEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4541 ea
Line Total: USD 0.45 
Availability - 9315
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 0.1013
10000 : USD 0.0987

4
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3505
50 : USD 0.2781
150 : USD 0.1906
500 : USD 0.1608
2500 : USD 0.1474
5000 : USD 0.1396

9315
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4541
10 : USD 0.3334
100 : USD 0.2104
500 : USD 0.1466
1000 : USD 0.1201
2500 : USD 0.1132
5000 : USD 0.0913
10000 : USD 0.0901

36545
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 4666
Multiples : 1
4666 : USD 0.1055

5820
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 4666
Multiples : 1
4666 : USD 0.1055

4850
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 0.1013
10000 : USD 0.0987

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMXB120EPEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB120EPEZ and other electronic components in the MOSFETs category and beyond.

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PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance R = 100 m DSon 3. Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -2.4 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -2.4 A T = 25 C - 100 120 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMXB120EPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa259 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB120EPE DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB120EPE 10 01 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB120EPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 September 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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