X-On Electronics has gained recognition as a prominent supplier of PMXB360ENEAZ MOSFET across the USA, India, Europe, Australia, and various other global locations. PMXB360ENEAZ MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PMXB360ENEAZ Nexperia

PMXB360ENEAZ electronic component of Nexperia
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See Product Specifications
Part No.PMXB360ENEAZ
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET 80 V, N-channel Trench MOSFET
Datasheet: PMXB360ENEAZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3496 ea
Line Total: USD 0.35

Availability - 19116
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3815
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 895
Multiples : 1
895 : USD 0.1452
1000 : USD 0.1297
3000 : USD 0.1143

38800
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 5000
Multiples : 5000
5000 : USD 0.1131
10000 : USD 0.1044
25000 : USD 0.0987

2
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1956
50 : USD 0.1562
150 : USD 0.1393
500 : USD 0.1183
2500 : USD 0.1089
5000 : USD 0.1033

19116
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3496
10 : USD 0.2668
100 : USD 0.1518
1000 : USD 0.1035
5000 : USD 0.0989
10000 : USD 0.0954
25000 : USD 0.0943
50000 : USD 0.0908

3815
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 893
Multiples : 1
893 : USD 0.1424

38800
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 5000
Multiples : 5000
5000 : USD 0.1123
10000 : USD 0.1036
25000 : USD 0.0956

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMXB360ENEAZ from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB360ENEAZ and other electronic components in the MOSFET category and beyond.

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PMXB360ENEA 80 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 80 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 1.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 1.1 A T = 25 C - 345 450 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMXB360ENEA 80 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB360ENEA DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB360ENEA 11 10 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB360ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 5 July 2018 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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