X-On Electronics has gained recognition as a prominent supplier of PMXB75UPEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMXB75UPEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMXB75UPEZ Nexperia

PMXB75UPEZ electronic component of Nexperia
PMXB75UPEZ Nexperia
PMXB75UPEZ MOSFETs
PMXB75UPEZ  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMXB75UPEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 2.9A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
Datasheet: PMXB75UPEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4013 ea
Line Total: USD 0.4 
Availability - 33009
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.4758
30 : USD 0.4224
100 : USD 0.2734
500 : USD 0.2491
1000 : USD 0.236

33009
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4013
10 : USD 0.2538
100 : USD 0.1236
1000 : USD 0.088
5000 : USD 0.0682
10000 : USD 0.0671
100000 : USD 0.066

14550
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 0.0722

9700
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5781
Multiples : 1
5781 : USD 0.0811

134712
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5781
Multiples : 1
5781 : USD 0.0811

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMXB75UPEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB75UPEZ and other electronic components in the MOSFETs category and beyond.

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PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance R = 69 m DSon Very low gate-source threshold voltage for portable applications V = -0.68 V GS(th) 3. Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -2.9 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.9 A T = 25 C - 69 85 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMXB75UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa259 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB75UPE DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB75UPE 00 01 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB75UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 July 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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