PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount V = 20V DSS l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters R = 0.020W DS(on) l Fast Switching G I = 39A D S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because 2 D Pak of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 4.5V 39 D C GS I T = 100C Continuous Drain Current, V 4.5V 25 A D C GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 57 W D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 10 V GS E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 23 A AR E Repetitive Avalanche Energy 5.7 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.2 qJC R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 C/W qJA 9/17/97IRL3302S Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D DV /DT Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.023 V = 4.5V, I = 23A GS D R Static Drain-to-Source On-Resistance W DS(on) 0.020 V = 7.0V, I = 23A GS D V Gate Threshold Voltage 0.70 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 21 S V = 10V, I = 23A fs DS D 25 V = 20V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 10V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 10V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -10V GS Q Total Gate Charge 31 I = 23A g D Q Gate-to-Source Charge 5.7 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 13 V = 4.5V, See Fig. 6 gd GS t Turn-On Delay Time 7.2 V = 10V d(on) DD t Rise Time 110 I = 23A r D ns t Turn-Off Delay Time 41 R = 9.5W, V = 4.5V d(off) G GS t Fall Time 89 R = 2.4W, f D Between lead, L Internal Source Inductance 7.5 nH S and center of die contact C Input Capacitance 1300 V = 0V iss GS C Output Capacitance 520 pF V = 15V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 39 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 160 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 23A, V = 0V SD J S GS t Reverse Recovery Time 62 94 ns T = 25C, I = 23A rr J F Q Reverse Recovery Charge 110 160 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I 23A, di/dt 97A/s, V V , SD DD (BR)DSS max. junction temperature. T 150C J Starting T = 25C, L = 0.49mH Pulse width 300s duty cycle 2%. J R = 25W , I = 23A. G AS Uses IRL3302 data and test conditions ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note AN-994.