X-On Electronics has gained recognition as a prominent supplier of PMZ200UNE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZ200UNE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMZ200UNE Nexperia

PMZ200UNE electronic component of Nexperia
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Part No.PMZ200UNE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 30V, 1.4A, SOT883-3
Datasheet: PMZ200UNE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.1427 ea
Line Total: USD 14.27 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 100
Multiples : 1
100 : USD 0.1427
500 : USD 0.1166
1000 : USD 0.0958
5000 : USD 0.0905

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMZ200UNE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZ200UNE and other electronic components in the MOSFETs category and beyond.

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PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1.4 A T = 25 C - 210 250 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product SOT883NXP Semiconductors PMZ200UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ200UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ200UNE ZV PMZ200UNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 12 March 2015 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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