X-On Electronics has gained recognition as a prominent supplier of PMZ290UNE2YL MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZ290UNE2YL MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMZ290UNE2YL Nexperia

Hot PMZ290UNE2YL electronic component of Nexperia
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See Product Specifications
Part No.PMZ290UNE2YL
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20V N-Channel Trench MOSFET
Datasheet: PMZ290UNE2YL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1172 ea
Line Total: USD 0.12 
Availability - 63327
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8708
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2985
Multiples : 1
2985 : USD 0.0701
10000 : USD 0.0506
20000 : USD 0.0461
30000 : USD 0.0445

12006
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 894
Multiples : 1
894 : USD 0.1407
1000 : USD 0.1401
3000 : USD 0.1394
6000 : USD 0.1388

63327
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1172
10 : USD 0.0884
100 : USD 0.0639
1000 : USD 0.049
2500 : USD 0.0404
10000 : USD 0.0351
20000 : USD 0.0351
50000 : USD 0.0341

8708
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2985
Multiples : 1
2985 : USD 0.0422

12006
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 894
Multiples : 1
894 : USD 0.1407

67900
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.038
20000 : USD 0.0378
30000 : USD 0.0374

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMZ290UNE2YL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZ290UNE2YL and other electronic components in the MOSFETs category and beyond.

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The PMZ290UNE2YL is an N-channel MOSFET manufactured by Nexperia and features 20V voltage, 2.0A drain current, and 2.5R on resistance. It is designed for low voltage switching, audio applications, and power management applications. This MOSFET is designed using Nexperia's advanced trench MOSFET technology for low on-resistance, high-saturation current, and low gate charge. It offers a wide range of features to enable reliable switching operations, including optimal gate charge, high-efficiency operation, and low input capacitance. Additionally, the PMZ290UNE2YL is Enhanced Avalanche Rated (EAR) for use in high-voltage solutions, ensuring reliable operation in extreme conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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