GS66516T-E02-MR Gan Systems

GS66516T Top-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Top-side cooled configuration R = 25 m DS(on) I = 60 A DS(max) Ultra-low FOM die Low inductance GaNPX package Simple drive requirements (0 V to 6 V) Package Outline Circuit Symbol Transient tolerant gate drive (-20 / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 9.0 x 7.6 mm PCB footprint Dual gate pads for optimal board layout RoHS 3 (6+4) compliant The thermal pad is internally connected to Source (S pin 3) and substrate Applications Description AC-DC Converters The GS66516T is an enhancement mode GaN-on- DC-DC Converters silicon power transistor. The properties of GaN allow Bridgeless Totem Pole PFC for high current, high voltage breakdown and high Inverters switching frequency. GaN Systems innovates with Energy Storage Systems industry leading advancements such as patented On Board Battery Chargers Island Technology and GaNPX packaging. Island Uninterruptable Power Supplies Technology cell layout realizes high-current die and Solar Energy Industrial Motor Drives high yield. GaNPX packaging enables low inductance Laser Drivers & low thermal resistance in a small package. The Traction Drive GS66516T is a top-side cooled transistor that offers Wireless Power Transfer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66516T Top-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Transient Drain-to-Source Voltage (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T =25 C) I 60 A case DS Continuous Drain Current (T =100 C) I 47 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 120 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) top side R 0.27 C /W JC Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66516T-TR GaNPX Top-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66516T-MR GaNPX Top-Side Cooled Mini-Reel 250 7 (180 mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback