GS66508T-E02-MR Gan Systems

GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features 650 V enhancement mode power switch Top-side cooled configuration R = 50 m DS(on) I = 30 A DS(max) Ultra-low FOM Island Technology die Low inductance GaNPX package Circuit Symbol Package Outline Easy gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 / +10V ) Very high switching frequency (> 100 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 6.9 x 4.5 mm PCB footprint Dual gate pads for optimal board layout The thermal pad is internally connected to RoHS 6 compliant Source (S- pin 3) and substrate Applications Description High efficiency power conversion The GS66508T is an enhancement mode GaN-on- High density power conversion silicon power transistor. The properties of GaN AC-DC Converters allow for high current, high voltage breakdown Bridgeless Totem Pole PFC and high switching frequency. GaN Systems ZVS Phase Shifted Full Bridge implements patented Island Technology cell Half Bridge topologies layout for high-current die performance & yield. Synchronous Buck or Boost GaNPX packaging enables low inductance & low Uninterruptable Power Supplies Industrial Motor Drives thermal resistance in a small package. The Single and 3 inverter legs GS66508T is a top-side cooled transistor that offers Solar and Wind Power very low junction-to-case thermal resistance for Fast Battery Charging demanding high power applications. These Class D Audio amplifiers features combine to provide very high efficiency 400 V input DC-DC converters power switching. On Board Battery Chargers Traction Drive Rev 180213 2009-2018 GaN Systems Inc. 1 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Transient Drain-to-Source Voltage (note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T =25 C) (note 2) I 30 A case DS Continuous Drain Current T =100 C) (note 2) I 25 A case DS (1) For 1 s (2) Limited by saturation Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) top side R 0.5 C /W JC Thermal Resistance (junction-to-board) (note 3) R 5.0 C /W JB Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Thermal resistance from junction to drain or source pad. Can be used for dual side cooling. Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66508T-TR GaNPX Top-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66508T-MR GaNPX Top-Side Cooled Mini-Reel 250 7 (180mm) 16mm Rev 180213 2009-2018 GaN Systems Inc. 2 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback