PMZ550UNE Nexperia

PMZ550UNE 30 V, N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 590 mA D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 590 mA T = 25 C - 550 670 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT883NXP Semiconductors PMZ550UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ550UNE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ550UNE ZK PMZ550UNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 25 March 2015 2 / 15