PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from process 10.
C
E
TO-92
SOT-23
1 B
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
Absolute Maximum Ratings* T = 25C unless otherwise noted
a
Symbol Parameter Ratings Units
V Collector-Emitter Voltage 45
CEO
V Collector-Base Voltage 75
CBO
V Emitter-Base Voltage 6.0
EBO
I Collector current - Continuous 500
C
T , T Junction and Storage Temperature -55 ~ +150
J stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width300s, Duty Cycle2%
Thermal Characteristics T =25C unless otherwise noted
A
Max.
Symbol Parameter Units
PN100 *MMBT100
PN100A *MMBT100A
P Total Device Dissipation 625 350 mW
D
Derate above 25C 5.0 2.8 mW/C
R Thermal Resistance, Junction to Case 83.3 C/W
JC
R Thermal Resistance, Junction to Ambient 200 357 C/W
JA
* Device mounted on FR-4 PCB 1.6 1.6 0.06
2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A Rev. C1 1 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier
Electrical Characteristics T =25C unless otherwise noted
C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV Collector-Base Breakdown Voltage I = 10A, I = 0 75 V
CBO C E
BV Collector-Emitter Breakdown Voltage * I = 1mA, I = 0 45 V
CEO C B
BV Emitter-Base Breakdown Voltage I = 10A, I = 0 6.0 V
EBO E C
I Collector-Base Cutoff Current V = 60V 50 nA
CBO CB
I Collector-Emiitter Cutoff Current V = 40V 50 nA
CES CE
I Emitter Cutoff Current V = 4V 50 nA
EBO EB
On Characteristics
h DC Current Gain I = 100A, V = 1.0V 100 80
FE C CE
100A 240
I = 10mA, V = 1.0V 100 100 450
C CE
100A 300 600
I = 100mA, V = 1.0V* 100
C CE
I = 150mA, V = 5.0V * 100 100 350
C CE
100A 100
V Collector-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.2 V
CE(sat) C B
I = 200mA, I = 20mA 0.4 V
C B
V Base-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.85 V
BE(sat) C B
I = 200mA, I = 20mA 1.0 V
C B
Small Signal Characteristics
f Current Gain Bandwidth Product V = 20V, I = 20mA 250 MHz
T CE C
C Output Capacitance V = 5.0V, f = 1.0MHz 4.5 pF
obo CB
NF Noise Figure I = 100A, V = 5.0V 100 5.0 dB
C CE
R = 2.0k, f = 1.0KHz 100A 4.0 dB
G
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A Rev. C1 2