2N5769 PN2369A www.centralsemi.com DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CES Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 4.5 V EBO Continuous Collector Current I 200 mA C Peak Collector Current I 500 mA CM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 400 nA CBO CB I V =20V, T=125C 30 A CBO CB A I V =20V (2N5769) 400 nA CES CE I V =4.5V (2N5769) 1.0 A EBO EB BV I=10A 40 V CBO C BV I=10A 40 V CES C BV I=10mA 15 V CEO C BV I=10A 4.5 V EBO E V I =10mA, I=1.0mA 200 mV CE(SAT) C B V I =30mA, I=3.0mA 250 mV CE(SAT) C B V I =100mA, I=10mA 500 mV CE(SAT) C B V I =10mA, I=1.0mA 700 850 mV BE(SAT) C B V I =30mA, I=3.0mA 1.15 V BE(SAT) C B V I =100mA, I=10mA 1.6 V BE(SAT) C B h V =0.35V, I =10mA (2N5769) 40 120 FE CE C h V =1.0V, I =10mA (PN2369A) 40 120 FE CE C h V =0.4V, I=30mA 30 FE CE C h V =1.0V, I=100mA 20 FE CE C R1 (10-March 2011)2N5769 PN2369A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =10V, I =10mA, f=100MHz 500 MHz T CE C C V =5.0V, I =0, f=140kHz 4.0 pF ob CB E C V =5.0V, I =0, f=1.0MHz (PN2369A) 5.0 pF ib EB C t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 12 ns on CC C B1 B2 t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 18 ns off CC C B1 B2 t V =10V, I =10mA, I =I=10mA 13 ns s CC C B1 B2 TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (10-March 2011) www.centralsemi.com