X-On Electronics has gained recognition as a prominent supplier of PMXB56ENZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMXB56ENZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMXB56ENZ Nexperia

PMXB56ENZ electronic component of Nexperia
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See Product Specifications
Part No.PMXB56ENZ
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
Datasheet: PMXB56ENZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3806 ea
Line Total: USD 0.38 
Availability - 837
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1076
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2192
10 : USD 0.1901
30 : USD 0.1775
100 : USD 0.162
500 : USD 0.155
1000 : USD 0.1241

837
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3806
10 : USD 0.2453
100 : USD 0.1254
1000 : USD 0.1111
5000 : USD 0.0979
10000 : USD 0.0836
25000 : USD 0.0836
50000 : USD 0.0792

4850
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.1241
10000 : USD 0.0909
25000 : USD 0.0899

1380
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1423
Multiples : 1
1423 : USD 0.0863

4850
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.1263
10000 : USD 0.0948
15000 : USD 0.0938
25000 : USD 0.0899
35000 : USD 0.0888
50000 : USD 0.0881

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMXB56ENZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB56ENZ and other electronic components in the MOSFETs category and beyond.

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PMXB56EN 30 V, N-channel Trench MOSFET 27 October 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance R = 49 m DSon Very fast switching 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 3.2 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3.2 A T = 25 C - 49 55 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMXB56EN 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source G 3 D drain 4 3 4 D drain S 017aaa253 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB56EN DFN1010D-3 plastic, leadless thermal enhanced ultra thin small outline SOT1215 package with side-wettable flanks (SWF) 3 terminals 0.75 mm pitch 1.1 mm x 1 mm x 0.37 mm body 7. Marking Table 4. Marking codes Type number Marking code 01 PMXB56EN 10 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB56EN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 27 October 2020 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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