PMSTA92,115 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 PMSTA92 PNP high-voltage transistor Product data sheet 2001 Feb 20 Supersedes data of 1999 Jun 01NXP Semiconductors Product data sheet PNP high-voltage transistor PMSTA92 FEATURES PINNING S-mini package PIN DESCRIPTION High voltage. 1 base 2 emitter APPLICATIONS 3 collector Primarily intended for use in telephony and professional communication equipment. 3 handbook, halfpage 3 DESCRIPTION PNP transistor in a microminiature (SMD) plastic package 1 intended for surface mounted applications. 2 MARKING 1 2 TYPE NUMBER MARKING CODE Top view MAM048 PMSTA92 tD2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 300 V CBO V collector-emitter voltage open base 300 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 200 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Refer to SOT323 (SC-70) standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air note 1 625 K/W th j-a Note 1. Refer to SOT323 (SC-70) standard mounting conditions. 2001 Feb 20 2