X-On Electronics has gained recognition as a prominent supplier of PMP5201Y,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMP5201Y,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMP5201Y,115 Nexperia

PMP5201Y,115 electronic component of Nexperia
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Part No.PMP5201Y,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT MATCHED PAIR
Datasheet: PMP5201Y,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 8433
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2511
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.317
50 : USD 0.2534
150 : USD 0.2261
500 : USD 0.1921
3000 : USD 0.1771
6000 : USD 0.168

8433
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.2893
100 : USD 0.1606
1000 : USD 0.1485
3000 : USD 0.1188
9000 : USD 0.1144
24000 : USD 0.1133

3236
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.588
10 : USD 0.4648
50 : USD 0.3332
78 : USD 0.2184
215 : USD 0.2072

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Package Case
Brand
Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMP5201Y,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMP5201Y,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMP5201V PMP5201G PMP5201Y PNP/PNP matched double transistors Rev. 03 28 August 2009 Product data sheet 1. Product prole 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated internally. Table 1. Product overview Type number Package PNP/PNP h /h NPN/NPN FE1 FE2 0.95 complement complement NXP JEITA PMP5201V SOT666 - PMP5501V PMP4201V PMP5201G SOT353 SC-88A PMP5501G PMP4201G PMP5201Y SOT363 SC-88 PMP5501Y PMP4201Y 1.2 Features n Current gain matching n Base-emitter voltage matching n Common emitter conguration for SOT353 types n Application-optimized pinout 1.3 Applications n Current mirror n Differential amplier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - - 45 V CEO I collector current - - - 100 mA C h DC current gain V = - 5V 200 290 450 FE CE I = - 2mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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