X-On Electronics has gained recognition as a prominent supplier of PN2907A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PN2907A Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PN2907A Central Semiconductor

PN2907A electronic component of Central Semiconductor
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See Product Specifications
Part No.PN2907A
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Gen Pur SW
Datasheet: PN2907A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.418 ea
Line Total: USD 0.42 
Availability - 6890
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6890
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.418
10 : USD 0.264
100 : USD 0.1287
1000 : USD 0.1111
2500 : USD 0.0935
10000 : USD 0.0858
25000 : USD 0.0803
50000 : USD 0.0781
100000 : USD 0.0748

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PN2907A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PN2907A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PN2906 PN2906A PN2907 PN2907A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-92 CASE PN2906 PN2906A MAXIMUM RATINGS: (T =25C) SYMBOL PN2907 PN2907A UNITS A Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A PN2906 PN2906A PN2907 PN2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =30V, V=0.5V - 50 - 50 nA CEV CE EB BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B f V =20V, I =50mA, f=200MHz 200 - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz - 30 - 30 pF ib EB C t V =30V, I =150mA, I=15mA - 45 - 45 ns on CC C B1 t V =6.0V, I =150mA, I =I =15mA - 100 - 100 ns off CC C B1 B2 R2 (30-January 2012)PN2906 PN2906A PN2907 PN2907A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C) PN2906 PN2907 A PN2906A PN2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I =0.1mA (PN2906, PN2907) 20 - 35 - FE CE C h V =10V, I =0.1mA (PN2906A, PN2907A) 40 - 75 - FE CE C h V =10V, I =1.0mA (PN2906, PN2907) 25 - 50 - FE CE C h V =10V, I =1.0mA (PN2906A, PN2907A) 40 - 100 - FE CE C h V =10V, I =10mA (PN2906, PN2907) 35 - 75 - FE CE C h V =10V, I =10mA (PN2906A, PN2907A) 40 - 100 - FE CE C h V =10V, I =150mA 40 120 100 300 FE CE C h V =10V, I =500mA (PN2906, PN2907) 20 - 30 - FE CE C h V =10V, I =500mA (PN2906A, PN2907A) 40 - 50 - FE CE C TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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