X-On Electronics has gained recognition as a prominent supplier of PMV50XPR MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV50XPR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV50XPR Nexperia

PMV50XPR electronic component of Nexperia
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Part No.PMV50XPR
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
Datasheet: PMV50XPR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 80558
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3209
50 : USD 0.2619
150 : USD 0.2365
500 : USD 0.205
3000 : USD 0.1909
6000 : USD 0.1824

80558
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2519
100 : USD 0.1375
1000 : USD 0.1144
3000 : USD 0.1001
9000 : USD 0.0946

1850
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 3
Multiples : 1
3 : USD 0.4102
25 : USD 0.2548
95 : USD 0.182
260 : USD 0.1722

11640
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1296
9000 : USD 0.1116
24000 : USD 0.1087
45000 : USD 0.1054

8730
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4088
Multiples : 1
4088 : USD 0.1193

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the PMV50XPR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV50XPR and other electronic components in the MOSFETs category and beyond.

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PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 1096 mW 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.6 A T = 25 C - 48 60 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMV50XP 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source G 3 D drain S 017aaa257 1 2 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV50XP TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV50XP %2M 1 % = placeholder for manufacturing site code PMV50XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 November 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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