PMV48XP,215 Nexperia

PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications High-side loadswitch Relay driver High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T =25C ---20 V DS amb voltage V gate-source -12 - 12 V GS voltage 1 I drain current V =-4.5V T =25C ---3.5A D GS amb Static characteristics R drain-source V =-4.5V I =-2.4A - 4855m DSon GS D on-state pulsed t 300 s 0.01 p resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV48XP 20 V, 3.5 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S SOT23 (TO-236AB) 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV48XP TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV48XP KN% 1 % = placeholder for manufacturing site code PMV48XP All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 21 December 2010 2 of 15 Nexperia B.V. 2017. All rights reserved