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X-On Electronics has gained recognition as a prominent supplier of PMV40UN2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV40UN2R MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV40UN2R Nexperia

PMV40UN2R electronic component of Nexperia
PMV40UN2R Nexperia
PMV40UN2R MOSFETs
PMV40UN2R  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMV40UN2R
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
Datasheet: PMV40UN2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1211 ea
Line Total: USD 0.61 
Availability - 7047
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
7047
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 5
Multiples : 5
5 : USD 0.1211
50 : USD 0.0977
150 : USD 0.0849
500 : USD 0.0593
6000 : USD 0.0513
9000 : USD 0.0505

248305
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4438
10 : USD 0.2825
100 : USD 0.1728
500 : USD 0.1199
1000 : USD 0.0946
3000 : USD 0.0748
9000 : USD 0.0693

2171
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.2534
50 : USD 0.1708
100 : USD 0.1484
162 : USD 0.1092

17460
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.088
9000 : USD 0.0742
24000 : USD 0.0735

5820
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 833
Multiples : 1
833 : USD 0.1562

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMV40UN2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV40UN2R and other electronic components in the MOSFETs category and beyond.

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PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1000 mW 3. Applications LED driver Power management Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 4.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3.7 A T = 25 C - 36 44 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV40UN2 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source G 3 D drain 1 2 S TO-236AB (SOT23) 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV40UN2 TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV40UN2 %K8 1 % = placeholder for manufacturing site code PMV40UN2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 April 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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