PMR670UPE Nexperia

PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---480mA D GS amb Static characteristics R drain-source on-state V =-4.5V I = -400 mA T = 25 C - 0.67 0.85 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416PMR670UPE NXP Semiconductors 20 V, 480 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 SOT416 (SC-75) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMR670UPE SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PMR670UPE AD PMR670UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 13 September 2011 2 of 16