PMST2369 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST2369 NPN switching transistor Product data sheet 1999 Apr 22 Supersedes data of 1997 May 05 NXP Semiconductors Product data sheet NPN switching transistor PMST2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 base 2 emitter APPLICATIONS 3 collector High-speed switching applications, primarily in portable and consumer equipment. 3 handbook, halfpage DESCRIPTION 3 NPN switching transistor in a SOT323 plastic package. 1 MARKING (1) 2 TYPE NUMBER MARKING CODE 1 2 PMST2369 1J Top view MAM062 Note 1. = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 200 mA C I peak collector current t 10 s 300 mA CM p I peak base current 100 mA BM P total power dissipation T 25 C note 1 200 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 22 2