X-On Electronics has gained recognition as a prominent supplier of PMST4403,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMST4403,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMST4403,115 Nexperia

PMST4403,115 electronic component of Nexperia
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See Product Specifications
Part No.PMST4403,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 200 mW Surface Mount SOT-323
Datasheet: PMST4403,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0265 ea
Line Total: USD 0.53 
Availability - 2052
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
2052
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0265
200 : USD 0.0214
600 : USD 0.0183
3000 : USD 0.0158
9000 : USD 0.0143
21000 : USD 0.0134

5736
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.121
10 : USD 0.0836
100 : USD 0.0429
1000 : USD 0.0341
3000 : USD 0.0242
9000 : USD 0.022
45000 : USD 0.0209
99000 : USD 0.0198

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMST4403,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMST4403,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMST4403 40 V, 600 mA PNP switching transistor 1 August 2016 Product data sheet 1. General description PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401 2. Features and benefits General purpose switching transistor AEC-Q101 qualified 3. Applications Switching and linear amplification. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -600 mA C h DC current gain V = -2 V I = -150 mA pulsed t 100 - 300 FE CE C p 300 s 0.02 T = 25 C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base C 2 E emitter B 3 C collector E sym132 1 2 SC-70 (SOT323)Nexperia PMST4403 40 V, 600 mA PNP switching transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMST4403 SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMST4403 %2T 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -600 mA C I peak collector current single pulse t 1 ms - -800 mA CM p I peak base current - -200 mA BM P total power dissipation T 25 C 1 - 200 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMST4403 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 August 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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