PMT29EN,115 NXP

PMT29EN 30 V, 6 A N-channel Trench MOSFET Rev. 1 31 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -20 - 20 V GS [1] I drain current V =10V; T =25C --6 A D GS amb Static characteristics R drain-source on-state V =10V; I =6A; T = 25 C - 24 29 m DSon GS D j resistance 2 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 S 017aaa253 SOT223 (SC-73) SOT223PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMT29EN SC-73 plastic surface-mounted package with increased heatsink; SOT223 4 leads 4. Marking Table 4. Marking codes Type number Marking code PMT29EN MT29EN PMT29EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 31 August 2011 2 of 15