PMR290XN,115 NXP

PMR290XN N-channel TrenchMOS extremely low level FET M3D173 Rev. 01 3 March 2004 Product data 1. Product prole 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 63% smaller than SOT23 Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 20 V I 0.97 A DS D P 0.53 W R 350 m. tot DSon 2. Pinning information Table 1: Pinning - SOT416 (SC-75), simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MBK090 SOT416 (SC-75) 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMR290XN SC-75 Plastic surface mounted package; 3 leads SOT416PMR290XN Philips Semiconductors TrenchMOS extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 20 V DS j V drain-gate voltage (DC) 25 C T 150 C; R =20k -20 V DGR j GS V gate-source voltage (DC) - 12 V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 0.97 A D sp GS T = 100 C; V = 4.5 V; Figure 2 - 0.61 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 1.94 A DM sp p P total power dissipation T =25 C; Figure 1 - 0.53 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 0.44 A S sp I peak source (diode forward) current T =25 C; pulsed; t 10 s - 0.88 A SM sp p 9397 750 12663 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 3 March 2004 2 of 12