PMR280UN,115 NXP

PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface mounted package Footprint 63% smaller than SOT23 Low on-state resistance Low threshold voltage 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 150C --20 V V DS j j drain current T =25 C V=4.5V --0.98A I D sp GS gate-source voltage -8 - 8 V V GS Static characteristics drain-source on-state V =4.5 V I = 0.2 A T = 25 C - 280 340 m R DSon GS D j resistance 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 S SOT416 (SC-75) 017aaa253 SOT416PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMR280UN SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PMR280UN R5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 20 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -20 V DGR j j GS V gate-source voltage -8 8 V GS I drain current T =25 C V = 4.5 V - 0.98 A D sp GS T = 100 C V = 4.5 V - 0.62 A sp GS I peak drain current T = 25 C pulsed t 10 s - 1.97 A DM sp p P total power dissipation T = 25 C - 0.53 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T = 25 C - 0.44 A S sp I peak source current T = 25 C pulsed t 10 s - 0.88 A SM sp p PMR280UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 February 2012 2 of 13