X-On Electronics has gained recognition as a prominent supplier of PMR280UN,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMR280UN,115 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMR280UN,115 NXP

PMR280UN,115 electronic component of NXP
Images are for reference only
See Product Specifications
Part No. PMR280UN,115
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET UTRENCHMOS (TM) FET
Datasheet: PMR280UN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0956 ea
Line Total: USD 286.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 0.161
25 : USD 0.1471
100 : USD 0.123
250 : USD 0.1098

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 1
3000 : USD 0.3002
3000 : USD 0.2946
3000 : USD 0.2832
3000 : USD 0.2719
9000 : USD 0.2719
21000 : USD 0.2719

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Channel Mode
Configuration
Brand
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We are delighted to provide the PMR280UN,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMR280UN,115 and other electronic components in the MOSFETs category and beyond.

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PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface mounted package Footprint 63% smaller than SOT23 Low on-state resistance Low threshold voltage 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 150C --20 V V DS j j drain current T =25 C V=4.5V --0.98A I D sp GS gate-source voltage -8 - 8 V V GS Static characteristics drain-source on-state V =4.5 V I = 0.2 A T = 25 C - 280 340 m R DSon GS D j resistance 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 S SOT416 (SC-75) 017aaa253 SOT416PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMR280UN SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PMR280UN R5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 20 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -20 V DGR j j GS V gate-source voltage -8 8 V GS I drain current T =25 C V = 4.5 V - 0.98 A D sp GS T = 100 C V = 4.5 V - 0.62 A sp GS I peak drain current T = 25 C pulsed t 10 s - 1.97 A DM sp p P total power dissipation T = 25 C - 0.53 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T = 25 C - 0.44 A S sp I peak source current T = 25 C pulsed t 10 s - 0.88 A SM sp p PMR280UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 February 2012 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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