X-On Electronics has gained recognition as a prominent supplier of IRFU9120PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFU9120PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFU9120PBF Vishay

Hot IRFU9120PBF electronic component of Vishay
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See Product Specifications
Part No.IRFU9120PBF
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 100 V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Datasheet: IRFU9120PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.442 ea
Line Total: USD 1.44 
Availability - 1943
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2329
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 34
Multiples : 1
34 : USD 0.962
150 : USD 0.936
500 : USD 0.91
2000 : USD 0.8645

727
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4433
10 : USD 1.2213
30 : USD 1.1
100 : USD 0.9635
500 : USD 0.9008
1000 : USD 0.8744

4684
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.947
10 : USD 1.133
100 : USD 0.99
250 : USD 0.946
500 : USD 0.8547
1000 : USD 0.7931
3000 : USD 0.7832

1943
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.442
10 : USD 0.9058
38 : USD 0.4512
105 : USD 0.4266

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Alternate Case Style
Current Id Max
Current Temperature
Full Power Rating Temperature
Junction To Case Thermal Resistance A
Lead Length
Lead Spacing
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Termination Type
Turn Off Time
Turn On Time
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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We are delighted to provide the IRFU9120PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFU9120PBF and other electronic components in the MOSFETs category and beyond.

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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 100 DS Repetitive Avalanche Rated R ( )V = - 10 V 0.60 DS(on) GS Surface Mount (IRFR9120, SiHFR9120) Q (Max.) (nC) 18 g Straight Lead (IRFU9120, SiHFU9120) Q (nC) 3.0 gs Available in Tape and Reel Q (nC) 9.0 gd P-Channel Configuration Single Fast Switching S Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION G D D Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G S cost-effictiveness. D G D The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight P-Channel MOSFET lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a Lead (Pb)-free and Halogen-free SiHFR9120-GE3 SiHFR9120TR-GE3 SiHFR9120TRL-GE3 SiHFU9120-GE3 a a IRFR9120PbF IRFR9120TRPbF IRFR9120TRLPbF IRFU9120PbF Lead (Pb)-free a a SiHFR9120-E3 SiHFR9120T-E3 SiHFR9120TL-E3 SiHFU9120-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 5.6 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 3.6 A C a Pulsed Drain Current I - 22 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 210 mJ AS a Repetitive Avalanche Current I - 5.6 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 10 mH, R = 25 , I = - 5.6 A (see fig. 12). DD J g AS c. I - 6.8 A, dI/dt 110 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0167-Rev. C, 04-Feb-13 Document Number: 91280 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.098 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 100 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 3.4 A - - 0.60 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 3.4 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 390 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -45- rss Total Gate Charge Q -- 18 g I = - 6.8 A, V = - 80 V, D DS Gate-Source Charge Q --V = - 10 V 3.0 nC gs GS b see fig. 6 and 13 --9.0 Gate-Drain Charge Q gd Turn-On Delay Time t -9.6 - d(on) Rise Time t -29 - r V = - 50 V, I = - 6.8 A, DD D ns b R = 18 , R = 7.1 , see fig. 10 g D Turn-Off Delay Time t -21- d(off) Fall Time t -25- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 5.6 S showing the A integral reverse G a Pulsed Diode Forward Current I -- - 22 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = - 5.6 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = - 6.8 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.33 0.66 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0167-Rev. C, 04-Feb-13 Document Number: 91280 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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